Thin film growth and Electrochemistry

⊙ C. Prasittichai and J. T. Hupp "Surface Modification of SnO₂ Photoelectrodes in Dye-Sensitized Solar Cells: Significant Improvements in Photovoltage via Al₂O₃ Atomic Layer Deposition," J. Phys. Chem. Lett.,2010, 1(10), 1611-1615.

⊙ B. D.Yuhas, C. Prasittichai, J. T. Hupp, and M.G. Kanatzidis "Enhanced Electrocatalytic Reduction of CO₂ with Ternary Ni-Fe₄S₄ and Co-Fe₄S₄-Based Biomimetic Chalcogels" J. Am. Chem. Soc.2011, 133 (40),15854–15857

⊙ V. O. Williams, N.C. Jeong, C. Prasittchai , M. J. Pellin and J.T. Hupp "Fast Transporting ZnO-TiO₂ Coaxial Photoanodes for Dye-Sensitized Solar Cells Based on ALD-Modified SiO₂ Aerogel Frameworks", ACS Nano, 2012, 6(7), 6185-6196

⊙ N. C. Jeong, C. Prasittichai, H. J. Son, R. A. Jensen, C. Y. Lee, O. K. Farha, and J. T. Hupp "Effective Panchromatic Sensitization of Electrochemical Solar Cells: Strategy and Organizational Rules for Spatial Separation of Complementary Light Harvesters on High-area Photo-electrodes "J. Am. Chem. Soc., 2012, 134(48), 19820–19827

⊙ H.J. Son, C.Prasittichai, J. E. Mondloch, L. Luo, J. Wu, D. W. Kim, O.K. Farha and J.T. Hupp"Dye Stabilization and Enhanced Photoelectrode Wettability in Water-Based Dye-Sensitized Solar Cells through Post-assembly Atomic Layer Deposition of TiO₂" J. Am. Chem. Soc., 2013, 135(31), 11529−11532

⊙ C. Prasittichai, J.R. Avila, O.K. Farha and J.T. Hupp "Systematic Modulation of Quantum (Electron) Tunneling Behavior by Atomic Layer Deposition on Nanoparticulate SnO₂ and TiO₂ Photoanodes " J. Am. Chem. Soc., 2013, 135(44), 16328-16331

⊙ C. Prasittichai, H. Zhou and S. F. Bent "Area Selective Molecular Layer Deposition of Polyurea Films" ACS Appl. Mater. Interfaces, 2013, 5 (24), 13391–13396

⊙ F. S. Hashemi, C. Prasittichai and S.F. Bent "A New Resist for Area Selective Atomic and Molecular Layer Deposition on Metal-Dielectric Patterns" J. Phys. Chem. C., 2014, 118 (20), 10957

⊙ C. Prasittichai, K.L. Pickrahn, F.S.Hashemi, D.S. Bergsman and S.F. Bent "Improving Area-Selective Molecular Layer Deposition by Selective SAM Removal" Appl. Mater. Interfaces, 2014, 6 (20), 17831–17836

⊙ F.S.Hashemi, C.Prasittichai and S.F.Bent "Self-correcting process for high quality patterning by area selective atomic layer deposition" ACS Nano, 2015, 9 (9), 8710-8717

⊙ Hashemi F. S., Prasittichai, C., and Bent, S.F. 2014. “A new resist for area selective atomic and molecular layer deposition on metal-dielectric patterns” J. Phys. Chem. C 118(20), 10957-10962.

⊙ Prasittichai C., Pickrahn, K.L., Hashemi, F.S., Bergsman, D.S., and Bent, S.F. 2014. “Improving area-selective molecular layer deposition by selective SAM removal” ACS Appl. Mater. Interfaces. 6 (20), 17831-17836

⊙ Son H.J., Kim, C.H., Kim, D. W., Jeong, N. C., Prasittichai, C., Luo, L., Wu, J., Farha, O. K., Wasielewski, M. R., and Hupp, J. T. 2015. “Post-assembly atomic layer deposition of ultrathin metal-oxide coatings enhances the performance of an organic dye-sensitized solar cell by suppressing dye aggregation” ACS Appl. Mater. Interfaces, 7 (9), 5150–5159

Hashemi, F.S., Prasittichai, C., and Bent, S.F. 2015. “Self-correcting process for high guality patterning by area selective atomic layer deposition” ACS Nano 9 (9), 8710-8717.